High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4 epilayers with high temperature functionality
This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV
PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa 2 O 4 …
PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa 2 O 4 …
Investigation of traps in halide vapor-phase epitaxy-grown β-Ga2O3 epilayers/n+-Ga2O3 using deep-level transient spectroscopy
H Sheoran, JK Kaushik, V Kumar… - … Science and Technology, 2024 - iopscience.iop.org
A detailed investigation of deep traps in halide vapor-phase epitaxy (HVPE)-grown β-Ga 2 O
3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from …
3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from …
Design and evaluation of β-Ga2O3 junction barrier schottky diode with p-GaN heterojunction
PH Than, TQ Than, Y Takaki - Physica Scripta, 2024 - iopscience.iop.org
A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga 2 O 3
heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown …
heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown …