Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as
a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently …

Due to the remarkable growth rate compared to another growth methods for gallium nitride
(GaN) growth, hydride vapor phase epitaxy (HVPE) is now the only method for mass product …

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an
epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off …

The electrical properties of high-quality bulk GaN crystals grown by Hydride Vapor Phase
Epitaxy (HVPE) were investigated. The series of samples were sliced from the same bulk …

We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si
substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates …

The morphology of GaN substrates grown by hydride vapor-phase epitaxy (HVPE) and by
ammonothermal methods has been correlated with reverse-bias stress testing applied to …

In this paper, crack-free 2-inch bulk GaN wafer with the thickness up to 3 mm was obtained
by HVPE homoepitaxy. A new method of acid wet etching was used to pre-treat GaN …

Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in
terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and …

We investigate the etching of a Si substrate in the fabrication process of freestanding GaN
crystal grown using a Si by HVPE. Followed by crystal growth, Si etching by vapor HCl at …

On an SiO2-patterned sapphire substrate, polarity-inverted lateral overgrowth produced N-
and Ga-polar GaN on the opening regions and on the SiO2 mask regions, respectively. Ga …