CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

The growing interest in nanoelectronics and photonics, combined with the development of
new germanium-based devices, provide the impetus to develop new doping methods …

After a short introduction we will highlight processing issues (setup, comparison of
annealing methods, relevant requirements for annealing due to doping, diffusion, activation …

In today's highly competitive semiconductor industry, and due to the accelerating pace of
technology development, the integration of new and disruptive solutions to address process …

In this paper we present a computational tool for the simulation of laser annealing processes
in FinFET structures. This is a complex self-consistent problem, where heating is evaluated …

The fabrication of highly doped and high quality Ge layers is a challenging and hot topic for
advancements in nanoelectronics, photonics and radiation detectors. In this article, we …

Defect evolution and dopant activation are intimately related to the use of ion implantation
and annealing, traditionally used to dope semiconductors during device fabrication. Ultra …

In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We
compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on …

The phosphorus incorporation by chemical vapor deposition and activation by laser
annealing reaches the electron concentration of cm. The pulsed laser not only activates the …