Nanowire gate-all-around MOSFETs modeling: Ballistic transport incorporating the source-to-drain tunneling
H Cheng, T Liu, C Zhang, Z Liu, Z Yang… - Japanese Journal of …, 2020 - iopscience.iop.org
Incorporating the source-to-drain tunneling current that is valid in all operating regions, an
analytical compact model is proposed in this paper for cylindrical ballistic gate-all-around n …
analytical compact model is proposed in this paper for cylindrical ballistic gate-all-around n …
Operation Principle and Fabrication of TFET
Field‐effect transistors, or FETs, are utilized in various electrical applications.
Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy …
Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy …
Demand of Low-Power-Driven FET as Biosensors in Biomedical Applications
Low-power-driven field-effect transistor (FET) biosensors in biomedical applications have
seen a rapid spread in recent years, from improvements in FET modifications and properties …
seen a rapid spread in recent years, from improvements in FET modifications and properties …
Gate Length Modulation of Junction-less Transistor Based on Silicon Nanowire
S Kumar, K Solanki - 2019 International Conference on Cutting …, 2019 - ieeexplore.ieee.org
Here we have simulated the influence on the characteristics of Silicon Nanowire Junction-
less transistor (JLT) with help of PADRE MuGFET simulation tools in the situation when we …
less transistor (JLT) with help of PADRE MuGFET simulation tools in the situation when we …
12 Demand of
M Getnet, R Chaujar - Emerging Low-Power Semiconductor …, 2022 - books.google.com
Modern business operations and consumer needs for data acquisition, processing, and
entertainment drive the growing industrial need for creating, acquiring, storing, processing …
entertainment drive the growing industrial need for creating, acquiring, storing, processing …
Design of Ballistic MOSFET for Operation at Terahertz Frequencies
S Mil'shtein, O Kia, M Zinaddinov - 2022 IEEE 31st …, 2022 - ieeexplore.ieee.org
The flow of information is expected to make a quantum leap with increasing speed of
semiconductor devices. Among many transistors, FETs with ballistic transport stand out as …
semiconductor devices. Among many transistors, FETs with ballistic transport stand out as …
Impact of structural geometry on quantum capacitance and threshold voltage of surrounding gate junction less nanowire field effect transistor
The Surrounding Gate (SG) Junction Less Nanowire Transistor (JLNT) structures are
gaining considerable attention in present times due to the availability of better control over …
gaining considerable attention in present times due to the availability of better control over …