There has been a renaissance of interest in exploring highly efficient thermoelectric
materials as a possible route to address the worldwide energy generation, utilization, and …

Understanding the mechanisms which determine the band offsets and Schottky barriers at
semiconductor contacts and engineering them for specific device applications are important …

This first comprehensive description of the most important material properties and device
aspects closes the gap between general books on solar cells and journal articles on …

Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …

In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

The band alignment and the chemical bonding at the β-Ga 2 O 3/AlN and β-Ga 2 O 3/GaN
interfaces are studied through hybrid functional calculations. We construct realistic slab …

The band structure, quantum confinement of charge carriers, and their localization affect the
optoelectronic properties of compound semiconductor heterostructures and multiple …

We analyzed the electronic structures of carbon-doped hexagonal boron nitride, focusing on
the comparison with the corresponding π-conjugate hydrocarbon molecules and odd …

InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal
photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost …

We have studied the In x Ga 1− x As∕ In y Al 1− y As (100) interface using first-principles ab
initio pseudopotential calculations, focusing on the effects of alloy composition and strain …