Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …

The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …

Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the
most promising material for the realization of a Si-compatible THz quantum cascade laser …

SiGe quantum wells are promising candidates for the development of intersubband light
emitters and photodetectors operating at mid-and far-infrared wavelengths. By virtue of their …

We analyze the linewidth of intersubband absorption features observed in n-type s-Ge/Ge
0.82 Si 0.18 multiquantum wells grown on Si (001) substrates. Supported by a thorough …

In this paper we present a detailed study of the intersubband absorption occurring between
electron states confined in strained Ge multi-quantum wells as a function of the temperature …