Stress and density of defects in Si‐doped GaN
We report a study by photoluminescence (PL), Raman scattering, and highly resolved X‐ray
diffraction (HRXRD) of a series of Si‐doped n‐type GaN layers grown by metalorganic vapor …
diffraction (HRXRD) of a series of Si‐doped n‐type GaN layers grown by metalorganic vapor …
Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs
M Souibgui, H Ajlani, A Cavanna, A Madouri… - The Journal of …, 2024 - pubs.aip.org
Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition
(CVD) on high-quality copper and subsequently transferred onto SiO 2 and on n-GaAs …
(CVD) on high-quality copper and subsequently transferred onto SiO 2 and on n-GaAs …
[HTML][HTML] Electrochemical characteristics of the n+-type GaAs substrate in HCl electrolyte and the morphology of the obtained structure
Z Mazouz, L Beji, J Meddeb, HB Ouada - Arabian Journal of Chemistry, 2011 - Elsevier
The anodic etching of n+-type GaAs (100) substrate in HCl aqueous solution has been
investigated experimentally using an in situ current–voltage J (V) and capacitance–voltage …
investigated experimentally using an in situ current–voltage J (V) and capacitance–voltage …
High Quality p+–n+‐GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy
L Beji, B El Jani, P Gibart - physica status solidi (a), 2001 - Wiley Online Library
We report the growth of a p+–n+‐GaAs tunnel diode by atmospheric pressure metalorganic
vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p‐type and n‐type …
vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p‐type and n‐type …
In depth study of the compensation in annealed heavily carbon doped GaAs
Heavily C-doped GaAs epitaxial layers with holes concentrations ranging from 1019 to 1.6×
1020cm− 3 have been grown by metal organic vapour phase epitaxy (MOVPE) using CCl4 …
1020cm− 3 have been grown by metal organic vapour phase epitaxy (MOVPE) using CCl4 …
In-situ current–voltage characteristics of the n+-type GaAs substrate in HF: Et-OH electrolyte
L Beji, Z Mazouz, A Othmane, HB Ouada - Journal of Physics and …, 2007 - Elsevier
In-situ characterisation of the n+-GaAs/HF: Et-OH interface is studied by current–voltage, J
(V). The experimental current-potential exhibits the presence of three potential regions …
(V). The experimental current-potential exhibits the presence of three potential regions …
Piezoelectric indium gallium arsenide/gallium arsenide strained quantum well structures on (111) A gallium arsenide: MOVPE growth, properties, and application to …
J Kim - 2003 - search.proquest.com
Abstract Strained InGaAs/GaAs quantum well (QW) structures on< 111>-oriented substrates
have received considerable attention because of the existence of a strong piezoelectric (PE) …
have received considerable attention because of the existence of a strong piezoelectric (PE) …