The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …

The rapidly developing III-nitrides materials and devices technologies are driving the
advancements in hybrid heterogeneous structures for multi-material and multifunctional …

A vertical integration of indium gallium nitride/gallium nitride (InGaN/GaN)-based microlight-
emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor …

The distributed Bragg reflector (DBR) has been widely used in flip-chip micro light-emitting
diodes (micro-LEDs) because of its high reflectivity. However, the conventional double-stack …

The mushroom growth of ultraviolet detection, the high performance demands of solar-blind
ultraviolet detectors have also grown. In our work, the AlGaN heterojunction nanocone array …

Modern society is the development stage of informationization and intelligence, and display
is the key factor to realize information exchange and intelligence. Among the many current …

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-
emitting (USE) light-emitting diode (LED) and describes the sidewall light emission …

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin
sideemitting (USE) light-emitting diode (LED) and describes the sidewall light emission …