The Ge-Ge, Si-Si, and Si-Ge Raman frequencies in Ge 1− x− y Si x Sn y alloys were
measured for x⩽ 0.2 and y⩽ 0.1. The Ge-Ge and Si-Si mode frequencies are found to be …

We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …

We have calculated the band structure of InGaAsN/GaAs (N)/GaAs compressively strained
quantum wells (QW) emitting at 1.3 µm using the band anticrossing model and an eight …

The paper describes an algorithm for computing the interband transition energy for
superlattices of quaternary solid solutions of diluted nitrides. Using the described method …

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity
and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1-x In x …

A novel scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers
is proposed in which TE and TM polarization gain is almost equal for GaInNAs quantum …

We have calculated the basic properties of multiple-quantum-well semiconductor optical
amplifiers (SOAs) with active regions based on the newly proposed material GaInNAs. The …

The role of the single‐N impurity in the GaInNAs system is evaluated using the single
impurity Anderson model. The N impurities can act either as scattering resonances or as …

We explore the potential of GaInNAs-based vertical cavity semiconductor optical amplifiers
(VCSOAs) operating at 1.3 µm. The obvious advantage of structural compatibility of GaInNAs …

разбавленных “нитридов. С помощью разработанного алгоритма проведены
численные эксперименты по моделированию характеристик структур на основе …