The temperature dependence of current–voltage (I–V) and capacitance–voltage (C–V)
characteristics of the Au/n-InP Schottky barrier diodes has been measured in the …

This paper examined the fabrication, structural, chemical and electrical features of Ti/WO3/p-
InP heterojunction (HJ). AFM, FESEM and XPS analyses were accomplished to investigate …

We have investigated the temperature dependent current–voltage (I–V) characteristics of Ti
Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of …

The variation in electrical characteristics of Mo/n-InP (100) Schottky contacts have been
systematically investigated as a function of temperature using current–voltage (I–V) and …

We fabricated PtSe 2/n-type GaN heterojunction diode by transferring a large-scale grown
two-dimensional (2D) PtSe 2 layered film onto a 3D GaN substrate. The PtSe 2 film …

Pb/p-Si Schottky barrier diodes (SBDs) with and without thin native oxide layer have been
fabricated. The previously polished p-Si wafer has been cleaned by using a traditional RCA …

Radio frequency magnetron sputtered Al-doped zinc oxide (AZO) thin films were formed on
n-type gallium nitride (GaN). X-ray diffraction reflections and Raman modes confirmed the …

A physics-based analytical model of the gate-leakage current noise in ultrathin gate oxide
MOSFETs is presented. The noise model is based on an inelastic trap-assisted tunneling …

Abstract An Au/Cu 2 ZnSnS 4 (CZTS)/n-GaN heterojunction (HJ) is fabricated with a CZTS
interlayer and probed its chemical states, structural, electrical and frequency-dependent …

Abstract Au/Ba 0.6 Sr 0.4 TiO 3 (BST)/n-InP metal/insulator/semiconductor (MIS) Schottky
diodes have been analyzed by current-voltage (IV) and capacitance-voltage (CV) …