Buffer optimization for crack-free GaN epitaxial layers grown on Si (1 1 1) substrate by MOCVD
We report the growth of GaN films on the Si (1 1 1) substrate by metalorganic chemical
vapour phase deposition (MOCVD). Different buffer layers were used to investigate their …
vapour phase deposition (MOCVD). Different buffer layers were used to investigate their …
High-performance visible-blind GaN-based pin photodetectors
We report high performance visible-blind GaN-based pin photodetectors grown by metal-
organic chemical vapor deposition on c-plane sapphire substrates. The dark current of the …
organic chemical vapor deposition on c-plane sapphire substrates. The dark current of the …
Monolithic integration of GaN nanowire light-emitting diode with field effect transistor
M Hartensveld, J Zhang - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN)-based light-emitting diodes (LEDs) are being investigated for the next
generation display technology. The persistent issue, however, has been the lack of ability to …
generation display technology. The persistent issue, however, has been the lack of ability to …
AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer
C Zhao, N Zeng, B Zou, Q Sun, J Wang, K Wei… - Microelectronics …, 2023 - Elsevier
Prior to MOCVD epitaxial growth, an AlN buffer layer was deposited on the sapphire
substrate by magnetron sputtering, and then a series of AlGaN/GaN HEMTs were prepared …
substrate by magnetron sputtering, and then a series of AlGaN/GaN HEMTs were prepared …
Defect structure determination of GaN films in GaN/AlN/Si heterostructures by HR-TEM, XRD, and slow positrons experiments
The present article evaluates, in qualitative and quantitative manners, the characteristics (ie,
thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge …
thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge …
Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy
High-quality GaN layers were grown on sapphire (0001) substrates using laser molecular
beam epitaxy (LMBE) by laser ablating a solid GaN target at different laser repetition rates …
beam epitaxy (LMBE) by laser ablating a solid GaN target at different laser repetition rates …
Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
Al x Ga 1− x N∕ GaN (x∼ 0.3) heterostructures with and without a high-temperature (HT)
AlN interlayer (IL) have been grown on sapphire (Al 2 O 3) substrates and AlN buffer/Al 2 O …
AlN interlayer (IL) have been grown on sapphire (Al 2 O 3) substrates and AlN buffer/Al 2 O …
Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure
This study assesses the characteristics (edge and screw dislocation density) of a
commercially available GaN/AlN/Al2O3 wafer. The heterostructure was evaluated by means …
commercially available GaN/AlN/Al2O3 wafer. The heterostructure was evaluated by means …
The influence of coalescence time on unintentional doping in GaN/sapphire
Unintentional n-type doping is commonly observed to occur during the growth of nominally
undoped GaN on sapphire. Scanning capacitance microscopy reveals that a layer of GaN …
undoped GaN on sapphire. Scanning capacitance microscopy reveals that a layer of GaN …
Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
MK Öztürk, Y Hongbo, B Sarıkavak, S Korçak… - Journal of Materials …, 2010 - Springer
The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum
well, which was aimed to make a light emitted diode and was grown by metalorganic …
well, which was aimed to make a light emitted diode and was grown by metalorganic …