[图书][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

[HTML][HTML] Thermodynamic theory of growth of nanostructures

XL Li, CX Wang, GW Yang - Progress in Materials Science, 2014 - Elsevier
Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

[图书][B] Epitaxy of nanostructures

V Shchukin, NN Ledentsov, D Bimberg - 2004 - books.google.com
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

Self-assembly of InAs quantum dots on GaAs (001) by molecular beam epitaxy

J Wu, P Jin - Frontiers of Physics, 2015 - Springer
Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots
(QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs (001) and …

Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs

R Heitz, TR Ramachandran, A Kalburge, Q Xie… - Physical review …, 1997 - APS
Abstract The two-dimensional (2D) to three-dimensional (3D) transition in highly strained
growth of InAs of GaAs (001) is investigated using in situ scanning tunneling microscopy and …

Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy

LG Wang, P Kratzer, M Scheffler, N Moll - Physical review letters, 1999 - APS
We study the energetics of island formation in Stranski-Krastanow growth within a parameter-
free approach. It is shown that an optimum island size exists for a given coverage and island …

Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

H Kissel, U Müller, C Walther, WT Masselink, YI Mazur… - Physical Review B, 2000 - APS
Photoluminescence spectroscopy is used to investigate the size distribution of InAs quantum
dots embedded in GaAs quantum wells as function of substrate temperature and InAs …

Size, shape, and stability of InAs quantum dots on the GaAs (001) substrate

LG Wang, P Kratzer, N Moll, M Scheffler - Physical Review B, 2000 - APS
We study the energetics of island formation in Stranski-Krastanow growth of highly
mismatched heteroepitaxy within a parameter-free approach. It is shown that the (frequently …

Mass transfer in Stranski–Krastanow growth of InAs on GaAs

TR Ramachandran, R Heitz, P Chen… - Applied Physics …, 1997 - pubs.aip.org
We present a quantitative study of the evolution of the material contained in two-and three-
dimensional (2D and 3D) surface features during the 2D–3D morphology transition in highly …

Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study

KE Khor, SD Sarma - Physical Review B, 2000 - APS
Abstract We use Monte Carlo (MC) simulations to study island formation in the growth of thin
semiconducting films deposited on lattice-mismatched substrates. It is known that islands …