A majority-based imprecise multiplier for ultra-efficient approximate image multiplication
F Sabetzadeh, MH Moaiyeri… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Approximate computing is an emerging approach for reducing the energy consumption and
design complexity in many applications where accuracy is not a crucial necessity. In this …
design complexity in many applications where accuracy is not a crucial necessity. In this …
A retrospective and a look forward: Fifteen years of physical unclonable function advancement
Severe security threats and alerts associated with the use of smart devices have drawn
increasing public attentions since the inception of Internet of Things (IoT) in late 1990s. IoT …
increasing public attentions since the inception of Internet of Things (IoT) in late 1990s. IoT …
Energy and area efficient imprecise compressors for approximate multiplication at nanoscale
Approximate computing is a new paradigm for designing energy-efficient integrated circuits
at the nanoscale. In this paper, we propose efficient imprecise 4: 2 and 5: 2 compressors by …
at the nanoscale. In this paper, we propose efficient imprecise 4: 2 and 5: 2 compressors by …
Energy-and quality-efficient approximate multipliers for neural network and image processing applications
M Ahmadinejad, MH Moaiyeri - IEEE Transactions on Emerging …, 2021 - ieeexplore.ieee.org
Approximate computing is a new trend that trades off computational accuracy for lower
energy dissipation and design complexity in various applications, where high precision is …
energy dissipation and design complexity in various applications, where high precision is …
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
E Abbasian, S Birla, M Gholipour - Microelectronics Journal, 2022 - Elsevier
This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla - Arabian Journal for Science and …, 2022 - Springer
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
A low-power single-ended SRAM in FinFET technology
This paper presents a single-ended low-power 7T SRAM cell in FinFET technology. This cell
enhances read performance by isolating the storage node from the read path. Moreover …
enhances read performance by isolating the storage node from the read path. Moreover …
A highly stable low-energy 10T SRAM for near-threshold operation
E Abbasian - IEEE Transactions on Circuits and Systems I …, 2022 - ieeexplore.ieee.org
This paper aims to explore the design of a novel highly stable low-energy 10T (SLE10T)
SRAM cell for near-threshold operation. The latch core of the proposed design consists of a …
SRAM cell for near-threshold operation. The latch core of the proposed design consists of a …
A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology
In this paper, a robust 12T-SRAM memory cell at sub-threshold voltage is designed to
reduce power consumption for low power applications, that in addition to reducing power …
reduce power consumption for low power applications, that in addition to reducing power …
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
E Abbasian, E Mani, M Gholipour… - Circuits, Systems, and …, 2022 - Springer
This paper proposes a modified Schmitt-trigger (ST)-based single-ended 11 T (MST11T)
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …