An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein.
The UV LED can include a mesa structure having at least one of: an n-doped bottom contact …

An LED device having plasmonically enhanced emission is provided. The device includes
an inverted LED structure with a coating of metal nanoparticles on the surface chosen to …

There is provided a phosphor having a B-type SiN. crystal structure including oxynitride
expressed by an empirical for mula Si Al-ONs: Eu. M., M being at least one selected from …

This application provides a method of manufacturing an npn nitride-semiconductor light-
emitting device which includes a current confinement region (A) using a buried tunnel …

A quantum well-based pin light emitting diode is provided that includes nanopillars with an
average linear dimension of between 50 nanometers and 1 micron. The nanopillars include …

An LED device having plasmonically enhanced emission is provided. The device includes
an inverted LED structure with a coating of metal nanoparticles on the Surface chosen to …

An example ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can
include an n-doped contact region, an active region configured to emit UV light that is …

A heterostructure for use in fabricating an optoelectronic device is provided. The
heterostructure includes a layer, such as an n-type contact or cladding layer, that includes …

A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with
an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane …

The present invention improves luminous efficiency of a nitride semiconductor light-emitting
element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar Al x2 …