Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

In this paper, the atomic layer deposition (ALD) of ultra-thin films (< 4 nm) of Al 2 O 3 and
HfO 2 on gold-supported monolayer (1L) MoS 2 is investigated, providing an insight on the …

Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …

To describe the atomic layer deposition (ALD) reactions of HfO2 from Hf (N (CH3) 2) 4 and
H2O, a three‐dimensional on‐lattice kinetic Monte‐Carlo model is developed. In this model …

HfO2 films were grown by atomic layer deposition from Hf [N (CH3) 2] 4 and H2O on Si (100)
substrates in the temperature range of 205–400° C. Around 250° C, nearly amorphous but …

The dielectric properties of HfO2 thin films, which were deposited on Si wafers by an atomic
layer deposition (ALD) technique at a wafer temperature of 300 C using a N-containing …

HfO 2 thin films were prepared by plasma-enhanced atomic layer deposition using a
cyclopentadienyl-alkylamido precursor [HfCp (NMe 2) 3, HyALD™] and an O 2 plasma over …

To investigate the atomic layer deposition (ALD) reactions for growth of HfO2 from Hf (NMe2)
4 (TDMAHf) and H2O, a density functional theory (DFT) slab model was employed. We …

HfO2 thin films have been deposited onto p-Si (100) substrates by atomic layer deposition
(ALD) using Cp2Hf (CH3) 2 (Cp= cyclopentadienyl) and water as precursors at 300–500° C …