Carrier mobility is at the root of our understanding of electronic devices. We present a unified
methodology for the parameter-free calculations of phonon-limited drift and Hall carrier …

4H-silicon carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising
material for power electronics. However, its applications are limited by low hole mobility …

Monoclinic semiconducting β-Ga2O3 has drawn attention, particularly because its thin film
could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van …

Alloying Ga 2 O 3 with Al 2 O 3 yields diverse structural phases with distinctive
optoelectronic properties, making them promising candidates for ultrawide bandgap …

The thermoelectric effects in bulk β-gallium oxide crystals are investigated in this work using
the ab initio calculated electron-phonon interactions and semi-classical Boltzmann transport …

Barium stannate (BaSnO 3) is an emerging perovskite oxide with promising properties for
many potential applications. One of the most outstanding properties is the high-room …

The generalized gradient approximation plus U parameter method is adopted to study the
structural and electronic properties of β-(Al x Ga 1-x) 2 O 3. The results show that the bond …

The thermoelectric properties of intrinsic n-type β-Ga2O3 are evaluated by first-principles
calculations combined with Boltzmann transport theory and relaxation time approximation …

The temperature dependence of experimental charge carrier mobility is commonly used as a
predictor of the dominant carrier scattering mechanism in semiconductors, particularly in …

The exfoliated two-dimensional (2D) Ga2O3 opens new avenues to fine-tune the carrier and
thermal transport properties for improving the electro-thermal performance of gallium oxide …