Thin film ferroelectric photonic-electronic memory

G Zhang, Y Chen, Z Zheng, R Shao, J Zhou… - Light: Science & …, 2024 - nature.com
To reduce system complexity and bridge the interface between electronic and photonic
circuits, there is a high demand for a non-volatile memory that can be accessed both …

Tunable non-volatile gate-to-source/drain capacitance of FeFET for capacitive synapse

TH Kim, O Phadke, YC Luo… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Using “capacitive” crossbar arrays for compute-in-memory (CIM) offers higher energy
efficiency compared to “resistive” crossbar arrays. The non-volatile capacitive (nvCap) …

Nonvolatile capacitive synapse: device candidates for charge domain compute-in-memory

S Yu, YC Luo, TH Kim, O Phadke - IEEE Electron Devices …, 2023 - ieeexplore.ieee.org
Compute-in-memory (CIM) has emerged as a compelling approach to address the ever-
increasing demand for energy-efficient computing for edge artificial intelligence (AI) …

Capacitive memory window with non-destructive read in ferroelectric capacitors

S Mukherjee, J Bizindavyi, S Clima… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Energy-efficient memory elements having a non-volatile memory window (MW) with a non-
destructive read operation are highly desirable for both random access memory and …

Ferroelectric capacitive memories: devices, arrays, and applications

Z Zhou, L Jiao, Z Zheng, Y Chen, K Han, Y Kang… - Nano …, 2025 - Springer
Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate
device capacitance for data storage, providing a new technological pathway to achieve two …

Inversion-type ferroelectric capacitive memory and its 1-kbit crossbar array

Z Zhou, L Jiao, J Zhou, Z Zheng, Y Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
By modulating the capacitance to store data, ferroelectric capacitive memories (FCMs) show
distinct advantages compared with the conventional resistive memories, including the near …

HfO₂-based ferroelectric optoelectronic memcapacitors

N Liu, J Zhou, Y Yao, S Zheng, W Feng… - IEEE Electron …, 2023 - ieeexplore.ieee.org
We report one-capacitor (1C) architecture HfO2-based ferroelectric optoelectronic
memcapacitors (FOMs), empowering with photoelectric perception and memory functions …

A Novel Small-Signal Ferroelectric Capacitance based Content Addressable Memory for Area-and Energy-Efficient Lifelong Learning

W Xu, Z Fu, K Wang, C Su, J Luo… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this work, for the first time, a novel energy-and area-efficient ferroelectric (FE) small-signal
capacitance based content addressable memory (CAM) design is proposed and …

A cross-layer framework for design space and variation analysis of non-volatile ferroelectric capacitor-based compute-in-memory accelerators

YC Luo, J Read, A Lu, S Yu - 2024 29th Asia and South Pacific …, 2024 - ieeexplore.ieee.org
Using non-volatile “capacitive” crossbar arrays for compute-in-memory (CIM) offers higher
energy and area efficiency compared to “resistive” crossbar arrays. However, the impact of …

Back-end-of-line-compatible fin-gate ZnO ferroelectric field-effect transistors

Q Kong, L Liu, Z Zheng, C Sun, Z Zhou… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report the back-end-of-line (BEOL)-compatible 3-D oxide semiconductor (OS) fin-gate
ferroelectric field-effect transistors (Fe-FETs) featuring atomic layer deposition (ALD)-grown …