Recent developments in optical spectroscopy applied to semiconductor surfaces and
interfaces are reviewed. It is shown that, by exploiting the underlying physics of the various …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

Reflection high-energy electron diffraction (RHEED) is widely used to characterize the
surface structure of single crystals. Moreover, RHEED has become a standard tool to …

Epitaxy provides readers with a comprehensive treatment of the modern models and
modifications of epitaxy, together with the relevant experimental and technological …

The book describes RHEED (reflection high-energy electron diffraction) used as a tool for
crystal growth. New methods using RHEED to characterize surfaces and interfaces during …

The characterization of epitaxial layers and their surfaces has benefitted a lot from the
enormous progress of optical analysis techniques during the last decade. In particular, the …

Strong intensity oscillations have been found in reflection high-energy electron diffraction
during epitaxial growth of BaTiO 3, La 2 CuO 4, and YBa 2 Cu 3 O 7− x with perovskite-type …

Detailed surface phase diagrams of GaAs (001) and AlxGa1− xAs (001) have been
determined in a study of MBE growth on vicinal surfaces. Information on the defect structure …

The problem of reflection high energy electron diffraction (RHEED) and electron scattering
from smooth and growing surface is briefly reviewed. Evidence is given that strong electron …

It is shown that Te and Pb, which segregate at the surface during the epitaxial growth of
GaAs, respectively, decrease and increase the surface diffusion length. This indicates that …