Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Ion conduction and redistribution at grain boundaries in oxide systems

G Gregori, R Merkle, J Maier - Progress in Materials Science, 2017 - Elsevier
The review provides a comprehensive overview on the major findings regarding ion
redistribution at interfaces in oxide systems and its effects on the electrical transport …

Ultra-dense dislocations stabilized in high entropy oxide ceramics

Y Han, X Liu, Q Zhang, M Huang, Y Li, W Pan… - Nature …, 2022 - nature.com
Dislocations are commonly present and important in metals but their effects have not been
fully recognized in oxide ceramics. The large strain energy raised by the rigid ionic/covalent …

[HTML][HTML] Oxygen vacancies: The (in) visible friend of oxide electronics

F Gunkel, DV Christensen, YZ Chen, N Pryds - Applied physics letters, 2020 - pubs.aip.org
Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

Grain Boundary Contributions to Li-Ion Transport in the Solid Electrolyte Li7La3Zr2O12 (LLZO)

S Yu, DJ Siegel - Chemistry of Materials, 2017 - ACS Publications
The oxide with nominal composition Li7La3Zr2O12 (LLZO) is a promising solid electrolyte
thanks to its high (bulk) Li-ion conductivity, negligible electronic transport, chemical stability …

Oxygen Diffusion in SrTiO3 and Related Perovskite Oxides

RA De Souza - Advanced Functional Materials, 2015 - Wiley Online Library
The transport of oxygen ions plays a central role in determining the performance or the
degradation of perovskite‐type oxides in applications as diverse as ceramic capacitors, solid …

Atomic-Scale Measurement of Flexoelectric Polarization at Dislocations

P Gao, S Yang, R Ishikawa, N Li, B Feng, A Kumamoto… - Physical review …, 2018 - APS
Owing to the broken translational symmetry at dislocations, a strain gradient naturally exists
around the dislocation cores and can significantly influence the electrical and mechanical …

Dislocations in SrTiO3: Easy To Reduce but Not so Fast for Oxygen Transport

D Marrocchelli, L Sun, B Yildiz - Journal of the American Chemical …, 2015 - ACS Publications
The effect of dislocations on the chemical, electrical and transport properties in oxide
materials is important for electrochemical devices, such as fuel cells and resistive switches …

How does moisture affect the physical property of memristance for anionic–electronic resistive switching memories?

F Messerschmitt, M Kubicek… - Advanced Functional …, 2015 - Wiley Online Library
Memristors based on anionic–electronic resistive switches represent a promising alternative
to transistor‐based memories because of their scalability and low power consumption. To …

Conceptual framework for dislocation-modified conductivity in oxide ceramics deconvoluting mesoscopic structure, core, and space charge exemplified for SrTiO3

L Porz, T Frömling, A Nakamura, N Li, R Maruyama… - ACS …, 2020 - ACS Publications
The introduction of dislocations is a recently proposed strategy to tailor the functional and
especially the electrical properties of ceramics. While several works confirm a clear impact of …