Advances in La-based high-k dielectrics for MOS applications
LN Liu, WM Tang, PT Lai - Coatings, 2019 - mdpi.com
This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor
(MOS) applications in recent years. According to the analyses of the physical and chemical …
(MOS) applications in recent years. According to the analyses of the physical and chemical …
Ultrathin ZrO2 on LiNi0. 5Mn0. 3Co0. 2O2 electrode surface via atomic layer deposition for high-voltage operation in lithium-ion batteries
High-voltage operation in LiNi 0.5 Mn 0.3 Co 0.2 O 2 (NMC532) is an attractive strategy to
meet the demands for practical application of high energy density lithium-ion batteries …
meet the demands for practical application of high energy density lithium-ion batteries …
Synthesis of crystalline mesoporous-assembled ZrO2 nanoparticles via a facile surfactant-aided sol–gel process and their photocatalytic dye degradation activity
T Sreethawong, S Ngamsinlapasathian… - Chemical engineering …, 2013 - Elsevier
In this work, crystalline mesoporous-assembled ZrO 2 nanoparticles were synthesized by a
facile sol–gel process with the aid of a structure-directing surfactant. In order to investigate …
facile sol–gel process with the aid of a structure-directing surfactant. In order to investigate …
The facile preparation of novel magnetic zirconia composites with the aid of carboxymethyl chitosan and their efficient removal of dye
T Wu, Q Shao, S Ge, L Bao, Q Liu - RSC advances, 2016 - pubs.rsc.org
Novel composites based on magnetic zirconia was synthesized with the aid of
carboxymethyl chitosan (Fe3O4/ZrO2–CMCS) by a facile method. The as-synthesized …
carboxymethyl chitosan (Fe3O4/ZrO2–CMCS) by a facile method. The as-synthesized …
Effect of the electronic state of Ti on M-doped TiO2 nanoparticles (M= Zn, Ga or Ge) with high photocatalytic activities: A experimental and DFT molecular study
M Salazar-Villanueva, A Cruz-López… - Materials Science in …, 2017 - Elsevier
In the pursuit of environmental sustainability, nanomaterials with specific characteristics that
can improve the environment by various methods have been developed. In this work, M …
can improve the environment by various methods have been developed. In this work, M …
Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment
DB Ruan, KS Chang-Liao, SH Yi… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of~ 2×
10-5 A/cm 2 at VG= V FB-1 V in p-substrate Ge (pGe) MOS device can be simultaneously …
10-5 A/cm 2 at VG= V FB-1 V in p-substrate Ge (pGe) MOS device can be simultaneously …
Studies on structural, optical and thermal properties of Fe3O4 (NR)/ZrO2 CSNCs synthesized via green approach for photodegradation of dyes
E Nandhakumar, P Priya, R Rajeswari… - Research on Chemical …, 2019 - Springer
In the present work, Fe 3 O 4 (NR)/ZrO 2 core/shell nanocomposites (CSNCs) were
synthesized using a green approach. The Argemone mexicana L. leaf extract acts as both a …
synthesized using a green approach. The Argemone mexicana L. leaf extract acts as both a …
Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient
YH Wong, ZC Lei, NIZ Abidin - Surfaces and Interfaces, 2021 - Elsevier
ZrO 2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient
at 500° C for 15 min. The effects of post-oxidation annealing temperature (400° C–800° C) …
at 500° C for 15 min. The effects of post-oxidation annealing temperature (400° C–800° C) …
Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
O Bethge, C Zimmermann, B Lutzer, S Simsek… - Journal of Applied …, 2014 - pubs.aip.org
The impact of thermal post deposition annealing in oxygen at different temperatures on the
Ge/Y 2 O 3 interface is investigated using metal oxide semiconductor capacitors, where the …
Ge/Y 2 O 3 interface is investigated using metal oxide semiconductor capacitors, where the …
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer
HH Lu, JP Xu, L Liu, LS Wang, PT Lai… - Microelectronics …, 2016 - Elsevier
The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with
yittrium-oxynitride interfacial passivation layer treated by N 2−/NH 3-plasma are …
yittrium-oxynitride interfacial passivation layer treated by N 2−/NH 3-plasma are …