Next-generation mid-infrared sources

D Jung, S Bank, ML Lee, D Wasserman - Journal of Optics, 2017 - iopscience.iop.org
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …

A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications

Z Yin, X Tang - Solid-state electronics, 2007 - Elsevier
Semiconductor lasers emitting in mid-infrared (IR) range, 2–5μm, have many important
applications in semiconductor industries, military, environmental protection …

2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

DZ Garbuzov, H Lee, V Khalfin… - IEEE Photonics …, 1999 - ieeexplore.ieee.org
A new approach in the design of (Al) InGaAsSb-GaSb quantum-well separate confinement
heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature …

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

JG Kim, L Shterengas, RU Martinelli… - Applied Physics …, 2002 - pubs.aip.org
We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well
diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a temperature …

GaSb-based mid-infrared 2–5 μm laser diodes

A Joullié, P Christol - Comptes Rendus Physique, 2003 - Elsevier
Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-
infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas …

Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ> 2.5 µm

L Shterengas, GL Belenky, JG Kim… - Semiconductor …, 2004 - iopscience.iop.org
Measurements of gain, loss, threshold current, device efficiency and spontaneous emission
of 2.5–2.82 µm In (Al) GaAsSb/GaSb quantum-well diode lasers have been performed over …

4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

DZ Garbuzov, RU Martinelli, H Lee, RJ Menna… - Applied physics …, 1997 - pubs.aip.org
AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 μm were
fabricated and tested. At 10–15 C, the uncoated SQW lasers with 2–3 mm cavity lengths …

GaSb-based 2. X μm quantum-well diode lasers with low beam divergence and high output power

M Rattunde, J Schmitz, G Kaufel, M Kelemen… - Applied physics …, 2006 - pubs.aip.org
We report on GaSb-based 2. X μ m diode lasers with an improved waveguide design,
leading to a reduced beam divergence in the fast axis of 44 full width at half maximum …

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In (Al) GaAsSb/GaSb diode lasers

JG Kim, L Shterengas, RU Martinelli… - Applied Physics …, 2003 - pubs.aip.org
We have fabricated and characterized 2.7 and 2.8 μm wavelength In (Al) GaAsSb/GaSb two-
quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 μm apertures …

2.33-m-Wavelength Distributed Feedback Lasers With InAs–InGaAs Multiple-Quantum Wells on InP Substrates

T Sato, M Mitsuhara, N Nunoya… - IEEE Photonics …, 2008 - ieeexplore.ieee.org
We demonstrate 2.33-mum-wavelength InP-based distributed feedback (DFB) lasers with
InAs-In 0.53 Ga 0.47 multiple-quantum wells as the active region. The maximum output …