Investigation of novel low bandgap source material for hetero-dielectric GAA-TFET with enhanced performance
The customary MOSFETs can be supplanted by Tunnel Field Effect Transistors (TFETs),
because of its capability of accomplishing sub-threshold swing (SS) under 60 mV/decade …
because of its capability of accomplishing sub-threshold swing (SS) under 60 mV/decade …
A novel technique to investigate the impact of temperature and process parameters on electrostatic and analog/RF performance of channel modulated junctionless …
The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the
SCE's with high graded doping of the channel region. Temperature effects on electrostatic …
SCE's with high graded doping of the channel region. Temperature effects on electrostatic …
Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET
In this paper, the temperature-dependent gate-induced drain leakage (GIDL) current model
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …
Effect of Temperature on Dynamic Parameters of Junctionless Multiple Nanowire Field-Effect Transistors
The electronic behaviors in the single and multiple junctionless nanowires (JL-NWs) field-
effect transistors (FETs) have been investigated at the temperature range from 300K to …
effect transistors (FETs) have been investigated at the temperature range from 300K to …
Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications
P Agarwal, S Rai, V Mishra - Chinese Physics B, 2023 - iopscience.iop.org
Metal–oxide–semiconductor field-effect transistor (MOSFET) faces the major problem of
being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions …
being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions …
Impact of Externally Induced Uniaxial Stress on the Electrical Performance of the Junctionless Nanowire Field-Effect Transistors
The uniaxial tensile mechanical stress (MS) is induced up to 1.4 GPa on the junctionless
channel of the twin junctionless nanowire (JL-NW) gate-all-around (GAA) field-effect …
channel of the twin junctionless nanowire (JL-NW) gate-all-around (GAA) field-effect …