A two-tier Kriging interpolation approach is proposed to model jump tables for resistive switches. Originally developed for mining and geostatistics, its locality of the calculation …
Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain …
Systematic studies are presented on the effects of cantilever buckling in vector piezoresponse force microscopy (V-PFM) imaging of polarization domains in thin-film based …
D Panda, A Dhar, SK Ray - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Nickel nanocrystal (Ni-NC)-embedded titanium dioxide films have been deposited for nonvolatile resistive switching memory devices. The polycrystalline behavior of the films has …
Spatially resolved polarization switching in ferroelectric nanocapacitors was studied on the sub-25 nm scale using the first-order reversal curve (FORC) method. The chosen capacitor …
Multiferroic B i F e O 3 (BFO) and B i 0.97 Y 0.03 F e 0.95 S c 0.05 O 3 (BYFSO) films were fabricated on FTO coated glass substrate using sol-gel spin-coating technique. Y–Sc co …
The field of nanoscience and nanotechnology involves investigation of materials and their technological aspects at the nanometre-length scale (1 nanometre= 10–9 m) and includes …
Nonvolatile bias-controlled polarization states in ferroelectric materials offer unique opportunities for information technology and data storage applications. The ability to probe …
B Li, C Wang - Ferroelectrics, 2021 - Taylor & Francis
As a single-phase multiferroic oxide, BiFeO3 (BFO) is suitable for applications such as magnetoelectric memories, sensors and actuators. However, BFO suffers from high leakage …