Recent progress of indium-bearing group-III nitrides and devices: a review
Y He, L Li, J Xiao, L Liu, G Li, W Wang - Optical and Quantum Electronics, 2024 - Springer
During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …
development of semiconductor industry and attracted significant attentions in different fields …
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
G Jiang, Y Lv, Z Lin, Y Liu, M Wang, H Zhou - Superlattices and …, 2021 - Elsevier
Abstract Identically-sized AlGaN/GaN HFETs were fabricated on three AlGaN/GaN
heterostructure with differing AlGaN barrier layer thicknesses of 15.5 nm, 19.3 nm and 24.7 …
heterostructure with differing AlGaN barrier layer thicknesses of 15.5 nm, 19.3 nm and 24.7 …
Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
Various surface treatment methods have been previously applied on the GaN high electron
mobility transistor (HEMT). In this study, the effects of N 2 O surface treatment on the …
mobility transistor (HEMT). In this study, the effects of N 2 O surface treatment on the …
InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric
In this letter, we present the electrical properties of the InAlN/GaN metal–insulator–
semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic …
semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic …
Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process
B Lv, L Zhang, J Mo - Applied Physics Letters, 2024 - pubs.aip.org
I-line stepper is widely used in large scale device manufacturing with limited achievable
critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be …
critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be …
An Approach to Extract the Trap States via the Dynamic Method With Substrate Voltage Applied During the Recovery Time
YH Lee, PH Chen, YC Zhang, CW Wu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This study discusses the application of the substrate voltage during the recovery time with
the dynamic on-resistance (dynamic) method to extract the deep trap states in the buffer …
the dynamic on-resistance (dynamic) method to extract the deep trap states in the buffer …
Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
G Jiang, P Cui, G Zhang, Y Zeng, G Yang, C Fu… - Microelectronics …, 2022 - Elsevier
Abstract An InAlN/GaN MIS-HEMT with ZrO 2 gate dielectric layer and a Schottky-gate
InAlN/GaN HEMT were fabricated. Subsequently, the influence of ZrO 2 gate dielectric layer …
InAlN/GaN HEMT were fabricated. Subsequently, the influence of ZrO 2 gate dielectric layer …
Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E-Field Decoupling
A novel structure of inverted electric-field decoupling (IED) to suppress the lateral crosstalk
in monolithic gallium nitride (GaN) devices is proposed in this article. The IED structure …
in monolithic gallium nitride (GaN) devices is proposed in this article. The IED structure …
Fundamental studies of InAlN/GaN HEMTs on Si substrate
Y Zeng - 2022 - apps.dtic.mil
The next-generation of communication systems, including 5G and beyond, vehicles and
internet of things needs components operating at mm-Wave bands with low cost and high …
internet of things needs components operating at mm-Wave bands with low cost and high …