Overview of real-time lifetime prediction and extension for SiC power converters
Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
[HTML][HTML] Open-cell aluminum foams with bimodal pore size distributions for emerging thermal management applications
FÇ Durmus, LP Maiorano, JM Molina - … Journal of Heat and Mass Transfer, 2022 - Elsevier
Recent advances in cellular materials for active thermal management applications involve
the integral design of their porous structure. In this work, open-cell aluminum foams with …
the integral design of their porous structure. In this work, open-cell aluminum foams with …
Junction temperature estimation of a SiC MOSFET module for 800V high-voltage application in electric vehicles
Z Shuai, S He, Y Xue, Y Zheng, J Gai, Y Li, G Li, J Li - Etransportation, 2023 - Elsevier
Abstract Silicon Carbide (SiC) power devices have significant advantages on power density
and energy efficiency, and are widely accepted as promising solutions for future electric …
and energy efficiency, and are widely accepted as promising solutions for future electric …
A fast IGBT junction temperature estimation approach based on ON-state voltage drop
Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic
device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures …
device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures …
Robustness of 650-V enhancement-mode GaN HEMTs under various short-circuit conditions
This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-
mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test …
mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test …
[PDF][PDF] IGBT 模块寿命评估研究综述
张军， 张犁， 成瑜 - TRANSACTIONS OF CHINA …, 2021 - dgjsxb.ces-transaction.com
摘要绝缘栅双极型晶体管(IGBT) 是电力电子系统实现电能变换与控制的核心组件之一. 然而,
工业界反馈的数据表明, 应用于高可靠性场合的IGBT 模块可靠性并不高, 其热疲劳失效将会导致 …
工业界反馈的数据表明, 应用于高可靠性场合的IGBT 模块可靠性并不高, 其热疲劳失效将会导致 …
A temperature-dependent Cauer model simulation of IGBT module with analytical thermal impedance characterization
X Yang, K Heng, X Dai, X Wu… - IEEE Journal of Emerging …, 2021 - ieeexplore.ieee.org
In pursuit of high power density and high reliability of power converters, the junction
temperature of power devices becomes an essential indicator for heath condition monitoring …
temperature of power devices becomes an essential indicator for heath condition monitoring …
Measurements of parameters of the thermal model of the IGBT module
In this paper, the problem of how to describe the thermal properties of the insulated-gate
bipolar transistor (IGBT) module with the use of the compact thermal model is considered …
bipolar transistor (IGBT) module with the use of the compact thermal model is considered …
A physics-based improved cauer-type thermal equivalent circuit for IGBT modules
A physics-based Cauer-type thermal equivalent circuit (TEC) can be constructed for an
insulated-gate bipolar transistor (IGBT) module based on its geometry. In the conventional …
insulated-gate bipolar transistor (IGBT) module based on its geometry. In the conventional …