Analysis of temperature dependent current-voltage characteristics of Sn/p-GaTe/In Schottky diode
In present study, Sn/p-GaTe/In Schottky diode is fabricated using thermal evaporation
method. The current–voltage (I–V) measurements of Sn/p-GaTe/In diode are carried out in …
method. The current–voltage (I–V) measurements of Sn/p-GaTe/In diode are carried out in …
Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes
In this study, electrodeposited diamond-like carbon (DLC) film was used to fabricate 12
identical Au/DLC/p-Si metal–interlayer–semiconductor (MIS) Schottky diodes. Current …
identical Au/DLC/p-Si metal–interlayer–semiconductor (MIS) Schottky diodes. Current …
Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes
The interface state density obtained from current–voltage (I–V) characteristics of Cd/n-type
GaAs Schottky barrier diodes (SBDs) at room temperature under hydrostatic pressure was …
GaAs Schottky barrier diodes (SBDs) at room temperature under hydrostatic pressure was …
Current transport and capacitance-voltage characteristics of n-InSb/p-GaP prepared by flash evaporation and liquid phase epitaxy
AAM Farag, FS Terra, GMM Fahim… - Metals and Materials …, 2012 - Springer
In this paper, n-Type of InSb films were successfully fabricated on p-GaP monocrystalline
substrates by both flash evaporation technique and liquid phase epitaxy to study some …
substrates by both flash evaporation technique and liquid phase epitaxy to study some …
Investigation of the optical and electrical properties of p-type porous GaAs structure
H Saghrouni, A Missaoui, R Hannachi, L Beji - Superlattices and …, 2013 - Elsevier
Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …
The effect of hydrostatic pressure on the electrical characterization of Au/n-InP Schottky diodes
The effect of hydrostatic pressure on the interface state density and Schottky barrier diode
parameters such as ideality factor and barrier height obtained from the current–voltage (I–V) …
parameters such as ideality factor and barrier height obtained from the current–voltage (I–V) …
Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states
Mn/p-Si Schottky barrier diode (SBD) electrical parameters and interface state density have
been investigated with current–voltage (I–V) characteristics and Cheung's functions …
been investigated with current–voltage (I–V) characteristics and Cheung's functions …
Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering
M Gülnahar, H Efeoğlu - Journal of alloys and compounds, 2011 - Elsevier
A Molybdenum Schottky diode on unintentially doped p-GaTe was fabricated using DC
sputtering. I–V characteristics of the fabricated diode were measured as a function of …
sputtering. I–V characteristics of the fabricated diode were measured as a function of …
Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range
B Abay - Journal of alloys and compounds, 2010 - Elsevier
The temperature dependent barrier characteristics of Ag/p-GaSe Schottky barrier diodes
have been analyzed in the temperature range of 70–350K based on thermionic emission …
have been analyzed in the temperature range of 70–350K based on thermionic emission …
Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts
AF Qasrawi, NM Gasanly - Materials Science and Engineering: B, 2012 - Elsevier
p-type TlGaSeS single crystal was used to fabricate a Schottky device. Silver and carbon
metals were used as the Ohmic and Schottky contacts, respectively. The device which …
metals were used as the Ohmic and Schottky contacts, respectively. The device which …