New AC–DC power factor correction architecture suitable for high-frequency operation

S Lim, DM Otten, DJ Perreault - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
This paper presents a novel ac-dc power factor correction (PFC) power conversion
architecture for a single-phase grid interface. The proposed architecture has significant …

Dynamic RON characterization technique for the evaluation of thermal and off-state voltage stress of GaN switches

T Cappello, A Santarelli… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
GaN power switches provide remarkable performance in terms of power-density, reduced
parasitics, and high-thermal handling capability that enable the realization of very efficient …

Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

R Bojoi, F Fusillo, A Raciti, S Musumeci… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
This paper deals with the performance evaluation of enhanced MOSFET based on a trench
gate layout in full-bridge DC-DC power converter with synchronous rectifiers for telecom …

Multitrack power factor correction architecture

M Chen, S Chakraborty… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Single-phase universal-input ac–dc converters are needed in a wide range of applications.
This paper presents a novel power factor correction (PFC) architecture that can achieve high …

based selection recommendation for galvanically isolated DC/DC converters designed for a wide input voltage range

M Gerstner, M Maerz, A Dietz - 2021 IEEE 19th International …, 2021 - ieeexplore.ieee.org
Depending on the application range, there are various recommendations in the literature
which converter topology should be used. These are mostly based on experience or more or …

Thermal evaluation of chip-scale packaged gallium nitride transistors

D Reusch, J Strydom, A Lidow - IEEE Journal of Emerging and …, 2016 - ieeexplore.ieee.org
With power converters demanding higher power density, transistors must be accommodated
in an ever-decreasing board space. Beyond gallium nitride (GaN)-based power transistors' …

A wide input range isolated stacked resonant switched-capacitor dc-dc converter for high conversion ratios

Y Li, L Gu, A Hariya, Y Ishizuka… - 2018 IEEE 19th …, 2018 - ieeexplore.ieee.org
This paper presents an isolated dc-dc converter architecture for high conversion ratios using
the stacked resonant switched-capacitor topology. Capacitive isolation is adopted in place of …

Evaluation of gate drive overvoltage management methods for enhancement mode gallium nitride transistors

D Reusch, M de Rooij - 2017 IEEE Applied Power Electronics …, 2017 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices are commercially available from a number of suppliers
and the market is growing. The predominant GaN technology is normally-off enhancement …

An isolated composite resonant multilevel converter with partial power voltage regulation for telecom application

Y Li, X Lyu, Z Ni, J Johnson… - 2018 IEEE Energy …, 2018 - ieeexplore.ieee.org
In this paper, an new converter that includes isolated composite resonant multilevel
converter (ICRMC) that uses composite converter concept and partial power voltage …

Highly Efficient Capacitive Galvanic Isolation for EV Charging Stations

P Granello, F Pellitteri, R Miceli… - … Symposium on Power …, 2022 - ieeexplore.ieee.org
This paper proposes an isolated Switched Capacitor (SC) power converter which provides
galvanic isolation through Capacitive Power Transfer (CPT). The combination of these two …