Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …

Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …

The low voltage SiC (Silicon carbide) MOSFET (1.2 kV to 1.7 kV) increases the switching
frequency limits of a power electronic converter several folds compared to low voltage Si …

This paper presents a 15 kV SiC MOSFET gate drive circuit, which features high common-
mode (CM) noise immunity, small size, light weight, and robust yet flexible protection …

Medium-voltage (MV) silicon carbide (SiC) devices such as the 15-kV SiC N-insulated gate
bipolar transistor (IGBT) have better thermal withstanding capability compared with silicon …

Accurate switching device characterization is necessary for effectively utilizing the
technological advantages of Silicon Carbide (SiC) Power Metal-Oxide-Semiconductor Field …

State-of-the art Silicon Carbide Power MOS-FETs switch at unprecedented speed.
Therefore, special attention must be paid to the circuit design of dynamic characterization …

The 15 kV SiC IGBT and 15 kV SiC MOSFET have been recently developed to enable non-
cascaded high-frequency (HF) MV converters. Such direct MV DC interfacing Dual Active …

Due to the superior material characteristics of Silicon Carbide (SiC), the use of SiC
MOSFETs enables higher system power density or efficiency depending on the design …