GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Prospects for wide bandgap and ultrawide bandgap CMOS devices
Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs
In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …
is crucial to consider the device-level breakdown characteristics. This letter replaces the …
High breakdown voltage and low-current dispersion in AlGaN/GaN HEMTs with high-quality AlN buffer layer
We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …
First RF power operation of AlN/GaN/AlN HEMTs with> 3 A/mm and 3 W/mm at 10 GHz
The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power
devices due to its thin top barrier, tight carrier confinement, and improved breakdown …
devices due to its thin top barrier, tight carrier confinement, and improved breakdown …
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering
Herein, 2D electron gas (2DEG) enhancement in an AlN/GaN/AlN double‐heterojunction
high‐electron‐mobility transistor (DH‐HEMT) is achieved by epilayer stress engineering …
high‐electron‐mobility transistor (DH‐HEMT) is achieved by epilayer stress engineering …
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
Improved channel electron mobility through electric field reduction in GaN quantum-well double-heterostructures
J Yaita, K Fukuda, A Yamada, T Iwasaki… - IEEE Electron …, 2021 - ieeexplore.ieee.org
To improve the electron mobility of quantum well (QW) gallium nitride (GaN) high electron
mobility transistors (HEMT), we investigated QW and conventional AlGaN/GaN …
mobility transistors (HEMT), we investigated QW and conventional AlGaN/GaN …