Passing access line structure in a memory device
S Pulugurtha, S Dhir, RN Gupta, SD Tang… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A method for memory device fabrication includes forming a plurality of
continuous fins on a substrate. An insulator material is formed around the fins. The …
continuous fins on a substrate. An insulator material is formed around the fins. The …
Microelectronic devices including semiconductive pillar structures, and related electronic systems
FD Fishburn, SW Lee, SL Light, S Guo - US Patent 11,501,804, 2022 - Google Patents
(57) ABSTRACT A microelectronic device comprises a semiconductive pillar structure
comprising a central portion, a first end portion, and a second end portion on a side of the …
comprising a central portion, a first end portion, and a second end portion on a side of the …
Access line having a resistive layer for memory cell access
S Talasila, C Mandalapu, RD Cassel… - US Patent …, 2024 - Google Patents
Abstract Systems, methods, and apparatus related to spike current suppression in a memory
array. In one approach, a memory device includes a memory array having a cross-point …
array. In one approach, a memory device includes a memory array having a cross-point …
Microelectronic devices having features with a fin portion of different sidewall slope than a lower portion, and related methods and electronic systems
Y Li, S Guo, MK Akhtar, AJ Schrinsky - US Patent 11,877,434, 2024 - Google Patents
A method of forming a microelectronic device structure comprises exposing a silicon
structure to an etching chemistry at a first bias voltage of greater than about 500 V to form at …
structure to an etching chemistry at a first bias voltage of greater than about 500 V to form at …
Charge screening structure for spike current suppression in a memory array
S Venkatesan, S Rajarajan, IS Elango… - US Patent …, 2024 - Google Patents
Abstract Systems, methods, and apparatus related to spike current suppression in a memory
array. In one approach, a memory device includes a memory array having a cross-point …
array. In one approach, a memory device includes a memory array having a cross-point …
Socket structure for spike current suppression in a memory array
RD Cassel, S Rajarajan, S Venkatesan… - US Patent …, 2023 - Google Patents
Abstract Systems, methods, and apparatus related to spike current suppression in a memory
array. In one approach, a memory device includes a memory array having a cross-point …
array. In one approach, a memory device includes a memory array having a cross-point …
Microelectronic devices including semiconductive pillar structures, and related electronic systems
SW Lee, SL Light, S Guo - US Patent 11,812,603, 2023 - Google Patents
A microelectronic device comprises semiconductive pillar structures each individually
comprising a digit line contact region disposed laterally between two storage node contact …
comprising a digit line contact region disposed laterally between two storage node contact …
Semiconductor device having a gate electrode in a trench
LEE Jee-Sun, DS Woo, NH Jeon - US Patent 11,469,306, 2022 - Google Patents
A semiconductor device including a substrate having isolation films and active regions that
are defined by the isolation films. The active regions extend in a first direction. A first trench …
are defined by the isolation films. The active regions extend in a first direction. A first trench …