A 124–184 GHz amplifier using slow-wave transmission lines in 28-nm FDSOI CMOS process

Millimeter-wave vertical III-V nanowire MOSFET device-to-circuit co-design

S Andrić, LO Fhager… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Vertical III-V nanowire MOSFETs show potential towards the ultimate transistor scaling. A
high transconductance and current density are achieved based on the gate-all-around …
被引用次数：12 相关文章 所有 5 个版本

Design of High-Linearity Wideband Power Amplifiers

D del Rio, A Rezola, JF Sevillano, I Velez… - Digitally Assisted, Fully …, 2019 - Springer
The power amplifier is usually the last active element in an RF transmitter front-end, and
usually one of the most critical blocks. It is the main contributor to the front-end power …
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A 93.9–105.6 GHz amplifier using customized on-chip inductor

G Su, L Lou, L Sun, J Liu, J Wen… - … Conference on Electron …, 2017 - ieeexplore.ieee.org
A five-stage 93.9 GHz-105.6 GHz common-source CMOS amplifier is presented in this
paper. The customized on-chip inductor and transmission line (TL) are designed for …
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