The fabrication of a micro field effect transistor (FET) pressure sensor using the commercial
0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process …

In the paper we present an overview of the latest progress in the conventional lift-mode
magnetic force microscopy (MFM) technique, achieved by advanced MFM tips and by …

Using combination of micromagnetic calculations and magnetic force microscopy (MFM)
imaging we find optimal parameters for novel magnetic tips suitable for switching …

In this report, we present a three dimensional (3D) imaging of magnetic field vector B→(x, y,
z) emanating from the magnetic material surfaces using a scanning Hall probe microscopy …

We developed a technology of sub-micrometer Hall probes for future application in scanning
hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes …

Abstract Scanning Hall Probe Microscopy (SHPM) is a quantitative and non invasive method
of local magnetic field measurement for magnetic and superconducting materials with high …

We report on the design, fabrication and initial mechanical testing of cantilevers with tips
based on a GaAs/In 0.485 Ga 0.515 P/AlAs heterostructure grown by metal organic chemical …

The typical measurement range of integrated Hall sensors lies between approximately 10 μ
T and 10 T. Above that range, nonlinear effects occur due to an increasing Hall angle. Below …

The construction of the rectangular silicon beam with mass and the by electromagnetic
transducer was described. In the silicon microsystem aluminium electrodes pattern on the …

W zastosowanej konstrukcji przetwornika na powierzchni cienkiej belki krzemowej
umieszczono uzwojenie w postaci cewki płaskiej. Płynący przez przetwornik prąd …