The radiation response of lateral power MOSFETs in total dose and energetic particle
environments is explored. Results indicate that lateral power MOSFETs can be quite …

In this paper, an integrable lateral trench-gate metal-oxide-semiconductor (LTGMOS), a
power MOSFET on In 0.53 Ga 0.47 As is presented. The device consists of two separate …

A lateral power MOSFET with the double extended trench gate (DETG) is proposed in this
letter. The double extended gate introduces the additional charges into the drift region and …

A novel trench power MOSFET with a buried-interface-drain (BID MOSFET) is proposed in
this paper. The drain n+ region of BID MOSFET extends to the surface of p− substrate and is …

In this paper, we report structural modifications in the conventional laterally diffused metal–
oxide–semiconductor (LDMOS) field-effect transistor on thin silicon-on-insulator by …

In this paper, improvement in the RF performance of a conventional LDMOS transistor on
silicon-on-insulator (SOI) is investigated by incorporating trenches in the drift region and we …

An 80 V class integrable lateral trench power MOSFET based on a shallow trench (~ 1.0
mum) structure with a low Figure of Merit (R on timesQ g) for high frequency switching …

In this paper, a lateral power metal–oxide–semiconductor field‐effect transistor with ultra‐
low specific on‐resistance is proposed to be applied to a high‐voltage (up to 200 V) …

An ultra-low specific on-resistance (R on, sp) trench silicon-on-insulator (SOI) LDMOS is
proposed in this paper. In this novel structure, a floating lateral metal field plate (FLFP) is …

Innovations in low-voltage (< 50 V) power electronic systems are driven by the requirements
of high-energy efficiency, bandwidth, size, and cost, mainly in the portable electronics …