Towards implementation of a nickel silicide process for CMOS technologies
C Lavoie, FM d'Heurle, C Detavernier… - Microelectronic …, 2003 - Elsevier
In this paper, we review some of the advantages and disadvantages of nickel silicide as a
material for the electrical contacts to the source, drain and gate of current and future CMOS …
material for the electrical contacts to the source, drain and gate of current and future CMOS …
Role of the early stages of Ni-Si interaction on the structural properties of the reaction products
A Alberti, A La Magna - Journal of Applied Physics, 2013 - pubs.aip.org
Nickel-silicon compounds, as most of the transition metal silicides, show peculiar
thermodynamic and kinetic behaviours. The reason resides in the metastability of a rich …
thermodynamic and kinetic behaviours. The reason resides in the metastability of a rich …
Label-free and real-time immunodetection of the avian influenza a hemagglutinin peptide using a silicon field-effect transistor fabricated by a nickel self-aligned …
H Hong, YK Park, JY Kim, K Song, CJ Choi - Materials Transactions, 2012 - jstage.jst.go.jp
Influenza A virus is an RNA virus of the family Orthomyxoviridae that infects vertebrates,
including human beings. It is usually transmitted though the air or by contact with …
including human beings. It is usually transmitted though the air or by contact with …
A Study on the Thermal Stabilities of the NiGe and Ni1− x Ta x Ge Systems
The thermal stabilities of the Ni-silicide and Ni-germanide systems were compared, and that
of the alloy system was also studied. Although the film had a stable low sheet resistance in …
of the alloy system was also studied. Although the film had a stable low sheet resistance in …
Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
In a system consisting of two different lattices, structural stability is ensured when an
epitaxial relationship occurs between them and allows the system to retain the stress whilst …
epitaxial relationship occurs between them and allows the system to retain the stress whilst …
Method of inhibiting metal silicide encroachment in a transistor
D Jawarani - US Patent 7,105,429, 2006 - Google Patents
Wong, ASW et al.; F-enhanced morphological and thermal stabil ity of NiSi films onBF+-
implanted Si (001); Applied Physics Let ters; Dec. 30, 2002: pp. 5138-5140; vol. 81, No. 27; …
implanted Si (001); Applied Physics Let ters; Dec. 30, 2002: pp. 5138-5140; vol. 81, No. 27; …
Effect of a Mo interlayer on the electrical and structural properties of nickel silicides
The effect of a Mo interlayer on the electrical properties and thermal stability of nickel
silicides was investigated. It is shown that the samples with the interlayer produced lower …
silicides was investigated. It is shown that the samples with the interlayer produced lower …
Method for fabricating semiconductor device
K Kawamura, S Akiyama - US Patent 7,829,461, 2010 - Google Patents
(57) ABSTRACT A semiconductor device fabrication method by which the thermal stability of
nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor …
nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor …
Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si
The formation of pseudoepitaxial transrotational structures has been observed during the
early stage of the reaction of thin Ni layers on [001] Si substrates. During the reaction, large …
early stage of the reaction of thin Ni layers on [001] Si substrates. During the reaction, large …
Three-dimensional imaging of carbon clusters in thermally stable nickel silicides by carbon pre-implantation
We have investigated effects of carbon pre-implantation (C-implantation) on electrical and
morphological properties of nickel silicide (NiSi). C-implanted NiSi showed an improved …
morphological properties of nickel silicide (NiSi). C-implanted NiSi showed an improved …