This paper comprehensively investigates a dielectric modulated Ge/Si interfaced label free
nanowire BIOFET for biomolecules detection. The main highlight of this work is the structural …

This paper proposes a compact analytical model and comprehensively investigates the
biosensing performance of a novel dielectric modulated triple surrounding gate germanium …

As the IC technology is evolving very rapidly, the feature size of the device has been
migrating to sub-nanometre regime for achieving the high packing density. To continue with …

Characterizing long‐range electric fields and built‐in potentials in functional materials at
nano to micrometer scales is of supreme importance for optimizing devices, eg, the …

This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and
uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface …

The junctionless MOSFET architectures appear to be attractive in realizing the Moore's law
prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double …

This paper presents the design, characterization, and analysis of a 10 nm silicon negative
channel FinFET. To validate the design, we have simulated the output characteristics and …

The present work investigates the Triple Material Double Gate Cylindrical Gate All Around
(TMDG-CGAA) MOSFET in the nanometer regime to improve the device performance …

Aggressive scaling of Metal-oxide-semiconductor Field Effect Transistors (MOSFET) have
been conducted over the past several decades and now is becoming more intricate due to …

The functionality of MOSFETs makes them a crucial component in modern electrical
engineering. These devices play a fundamental role in a wide range of applications …