Optically pumped VECSELs: review of technology and progress

M Guina, A Rantamäki… - Journal of Physics D …, 2017 - iopscience.iop.org
Vertical-external-cavity surface-emitting lasers (VECSELs) are the most versatile laser
sources, combining unique features such as wide spectral coverage, ultrashort pulse …

Next-generation mid-infrared sources

D Jung, S Bank, ML Lee, D Wasserman - Journal of Optics, 2017 - iopscience.iop.org
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …

Wide‐Wavelength Tunable Mid‐Infrared Lasing Based on Black Arsenic Phosphorus

J Zhang, M Xie, Y Zhang, J Wang… - Advanced Optical …, 2023 - Wiley Online Library
Mid‐infrared (MIR) semiconductor laser sources are essential for applications in gas
detection, infrared imaging, and high‐speed free space optical communications. At present …

Mid-infrared semiconductor lasers: a review

E Tournie, AN Baranov - Semiconductors and Semimetals, 2012 - Elsevier
The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …

Persistent photoconductivity of polycrystalline Pb1− xSnxTe: In films on an amorphous substrate in the telecom wavelength range

V Kovalyuk, E Sheveleva, A Mel'nikov… - Journal of Applied …, 2023 - pubs.aip.org
PbTe-based compounds are excellent candidates for the different types of optical detector
applications from near to far IR ranges. In the present work, a technology has been …

VECSEL semiconductor lasers: a path to high‐power, quality beam and UV to IR wavelength by design

M Kuznetsov - Semiconductor disk lasers: physics and …, 2010 - Wiley Online Library
Since its invention and demonstration in 1960, several types of laser have been developed,
such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used …

Whispering gallery mode HgCdTe laser operating near 4 μm under Peltier cooling

AA Razova, MA Fadeev, VV Rumyantsev… - Applied Physics …, 2023 - pubs.aip.org
Due to their widely tunable bandgap, HgCdTe heterostructures with quantum wells are a
promising material system for semiconductor lasers in the entire mid-infrared range …

Molecular beam epitaxy of IV-VI semiconductors: multilayers, quantum dots and device applications

G Springholz - Molecular beam epitaxy: from research to mass …, 2013 - books.google.com
Molecular beam epitaxy of IVeVI semiconductors has long been used both for fabrication of
low-dimensional structures [1e4] and infrared optoelectronic devices [5e11]. The …

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

M Rahim, M Fill, F Felder, D Chappuis, M Corda… - Applied Physics …, 2009 - pubs.aip.org
Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W
output power in pulsed mode and up to 17 mW in continuous mode at− 172 C were realized …

Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

A Khiar, M Rahim, M Fill, F Felder, F Hobrecker… - Applied Physics …, 2010 - pubs.aip.org
A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is
described. The active part is a∼ 1 μ m thick PbTe layer grown epitaxially on a Bragg mirror …