A review of technologies and design techniques of millimeter-wave power amplifiers

V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

Sub-terahertz channel sounder: Review and future challenges

Y Lyu, P Kyösti, W Fan - China Communications, 2023 - ieeexplore.ieee.org
Due to the large amount of unused and unexplored spectrum resources, the so-called sub-
Terahertz (sub-THz) frequency bands from 100 to 300 GHz are seen as promising bands for …

A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psat for Sub-THz Imaging System

J Zhang, T Wu, L Nie, S Ma, Y Chen, J Ren - IEEE Access, 2021 - ieeexplore.ieee.org
This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS
technology for a sub-terahertz frequency modulated continuous wave imaging system. It …

A broadband D-band dual-peak Gmax-core amplifier with a T-shaped embedding network in CMOS

J Kim, CG Choi, K Lee, K Kim, SU Choi… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
We present a novel high-gain broadband-core amplifier with a T-shaped passive
embedding network consisting of two series capacitors and one shunt inductor. The …

A 124-to-152-GHz power amplifier exploiting Chebyshev-type two-section wideband and low-loss power-combining technique in 28-nm CMOS

J Zhang, Y Wang, Y Chen, J Ren… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …

120-GHz 8-stage broadband amplifier with quantitative stagger tuning technique

TH Jang, KP Jung, JS Kang… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A novel quantitative design method is proposed herein for a 120-GHz 8-stage broadband
amplifier using the stagger tuning technique. The pole frequencies of the unit amplifiers are …

A 125.5-157 GHz 8 dB NF and 16 dB of gain D-band low noise amplifier in CMOS SOI 45 nm

A Hamani, A Siligaris, B Blampey… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm
technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB …

One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS

S Sadlo, M De Matos, A Cathelin… - 2021 IEEE Radio …, 2021 - ieeexplore.ieee.org
In order to improve amplifiers' power gain for a close to f_max operation, a methodology to
size the embedding of any active two port is described and then applied to the design of a …

D-band on-chip couplers with multilayered slow-wave unit cell in standard CMOS process

S Hu, Z Shi, G Dong, Y Shen - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
Millimeter-wave (mm-Wave) and terahertz (THz) technologies are promising for many
emerging applications including 6G communication. At such high frequencies, it is very …

A -Band Wideband Low-Noise Amplifier Adopting Pseudo-Simultaneous Noise and Input Matched Dual-Peak -Core

H Lee, B Yun, H Jeon, W Keum… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a high-gain and wideband-band low-noise amplifier (LNA) adopting a
proposed wideband pseudo-simultaneous noise-and input-matched (p-SNIM) dual-peak …