The substantial amount of data generated every second in the big data age creates a
pressing requirement for new and advanced data storage techniques. Luminescent …

Neural networks, one of the key artificial intelligence technologies today, have the
computational power and learning ability similar to the brain. However, implementation of …

Investigation has been done of bipolar resistive switching mechanism of Pt/Nb 2 O 5/Pt and
Bare conductive paint (BCP)/Nb 2 O 5/Pt memristive devices with orthorhombic phase …

Employing electrochemical impedance spectroscopy (EIS), we demonstrate a novel
approach towards characterizing the switching behavior of nano-ionic memristor, M/TiO 2 …

Because of its minor size, simple construction, and low power consumption, Memristor has
attracted considerable attention as a potential next-generation memory device. It is possible …

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory
array has been examined using the crossbar (4× 4) arrays fabricated by using DC/RF …

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-
Cs) tri-cation lead iodide perovskite/poly (methyl methacrylate (PMMA)/Al memory device …

We have demonstrated stable bipolar resistive switching characteristics with low forming
voltage in the Rapid Thermal Annealed (RTA) ZnFe 2 O 4 (ZDR6) devices. The structural …

This paper proposed the high sensitive linear and rotational based differential capacitive
inertial sensor. The designed sensor consists of a proof of mass, which resides in an air …

After investigating the behavior of ions during the growth of conductive filaments, we
suggested a model for the growth process and electrical characteristics of the conductive …