Reduced dislocation introduction in III–V/Si heterostructures with glide-enhancing compressively strained superlattices

JT Boyer, AN Blumer, ZH Blumer… - Crystal Growth & …, 2020 - ACS Publications
The novel use of a GaAs y P1–y/GaP compressively strained superlattice (CSS) to provide
enhanced control over misfit dislocation (MD) evolution and threading dislocation density …

Growth and characterization of gallium arsenide phosphide and gallium phosphide on silicon for III-V/Si multi-junction solar cells

RD Hool - 2022 - ideals.illinois.edu
Solar photovoltaic (PV) technologies offer the ability to provide a significant percent of the
world's increasing energy demand while reducing overall greenhouse gas emissions. At the …