[HTML][HTML] Plasma Treatment Technologies for GaN Electronics
Nowadays, the third-generation semiconductor led by GaN has brought great changes to the
semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown …
semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown …
Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter
This letter presents a monolithic integrated circuit (IC) platform based on the p-GaN gated
HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC …
HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC …
Au-Free Multi-Layer Ti/Al Ohmic Contacts for AlGaN/GaN HEMTs
C Wang, Q Zhang, X Feng, Z Wang… - … Conference on IC …, 2024 - ieeexplore.ieee.org
This paper studies Au-free, multi-layer Ohmic metal (Til AIITil AIITil AI/Ni/TiN
7.5/30/7.5/30/7.5/30/60/60 nm) stacking on the AIGaN/AIN/GaN heterostructure using low …
7.5/30/7.5/30/7.5/30/60/60 nm) stacking on the AIGaN/AIN/GaN heterostructure using low …
Etching-Free Hydrogen Treatment p-GaN HEMT on Sapphire Substrate
J Jiang, A Li, G Yu, Z Zeng… - 2024 21st China …, 2024 - ieeexplore.ieee.org
To address damage caused by Cl-based plasma etching in p-GaN gate HEMT fabrication,
etching-free hydrogen (H) plasma treatment has been developed for HEMT. This work …
etching-free hydrogen (H) plasma treatment has been developed for HEMT. This work …