Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio …
S Saleh, B Koldehofe - Proceedings of the 22nd ACM Workshop on Hot …, 2023 - dl.acm.org
Current network functions build heavily on fixed programmed rules and lack capacity to support more expressive learning models, eg brain-inspired Cognitive computational …
J Shin, M Kang, S Kim - Applied Physics Letters, 2021 - pubs.aip.org
In this study, we present an analysis of the gradually modulated conductance of the Ti/WO x/Pt memristor. The deposited material layers were verified by transmission electron …
Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these …
In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si–SiO2 devices, this work looks at possible uses of dual-doped materials-based …
AS Goossens, T Banerjee - Applied Physics Letters, 2023 - pubs.aip.org
The potential applications of memristive devices extend far beyond what can be realized using digital computing with utilization prospects in data encryption and in mobile …
The areal footprint of memristors is a key consideration in material‐based neuromorphic computing and large‐scale architecture integration. Electronic transport in the most widely …
S Saleh, AS Goossens, T Banerjee… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
The Internet relies heavily on programmable match-action processors for matching network packets against locally available network rules and taking actions, such as forwarding and …
X Zhao, Y Li, C Ai, D Wen - Materials, 2019 - mdpi.com
A kind of devices Pt/Ag/ZnO: Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology …