[图书][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Nanostructure and nanomaterial characterization, growth mechanisms, and applications

CI Ossai, N Raghavan - Nanotechnology Reviews, 2018 - degruyter.com
Nanostructures are playing significant roles in the development of new functions and the
enhancement of the existing functions of industrial devices such as sensors, transistors …

Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

C O'Regan, S Biswas, N Petkov… - Journal of Materials …, 2014 - pubs.rsc.org
One-dimensional semiconductor nanostructures have been studied in great depth over the
past number of decades as potential building blocks in electronic, thermoelectric …

Predictive modeling of self-catalyzed III-V nanowire growth

F Glas, MR Ramdani, G Patriarche, JC Harmand - Physical Review B …, 2013 - APS
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires

VG Dubrovskii, T Xu, AD Álvarez, SR Plissard… - Nano …, 2015 - ACS Publications
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire
ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …

III–V nanowire arrays: growth and light interaction

M Heiss, E Russo-Averchi, A Dalmau-Mallorquí… - …, 2013 - iopscience.iop.org
Semiconductor nanowire arrays are reproducible and rational platforms for the realization of
high performing designs of light emitting diodes and photovoltaic devices. In this paper we …

Quantitative description for the growth rate of self-induced GaN nanowires

V Consonni, VG Dubrovskii, A Trampert… - Physical Review B …, 2012 - APS
We determine with high precision the growth rate of self-induced GaN nanowires grown by
molecular beam epitaxy under various conditions from scanning electron micrographs by …

Stopping and resuming at will the growth of GaAs nanowires

G Priante, S Ambrosini, VG Dubrovskii… - Crystal growth & …, 2013 - ACS Publications
We report on the possibility of interrupting and resuming at will the self-assisted growth of
GaAs nanowires by molecular beam epitaxy. The Ga nanoparticles assisting nanowire …

Influence of the group V element on the chemical potential and crystal structure of Au-catalyzed III-V nanowires

VG Dubrovskii - Applied physics letters, 2014 - pubs.aip.org
We present a kinetic growth model having a particular emphasis on the influence of the
group V element on the preferred crystal structure of Au-catalyzed III-V nanowires. The …

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

F Matteini, VG Dubrovskii, D Rüffer… - …, 2015 - iopscience.iop.org
Nanowire diameter has a dramatic effect on the absorption cross-section in the optical
domain. The maximum absorption is reached for ideal nanowire morphology within a solar …