Nanostructures are playing significant roles in the development of new functions and the enhancement of the existing functions of industrial devices such as sensors, transistors …
One-dimensional semiconductor nanostructures have been studied in great depth over the past number of decades as potential building blocks in electronic, thermoelectric …
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs nanowires, that depends on only a few a priori unknown physical parameters. The model is …
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …
Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we …
We determine with high precision the growth rate of self-induced GaN nanowires grown by molecular beam epitaxy under various conditions from scanning electron micrographs by …
We report on the possibility of interrupting and resuming at will the self-assisted growth of GaAs nanowires by molecular beam epitaxy. The Ga nanoparticles assisting nanowire …
We present a kinetic growth model having a particular emphasis on the influence of the group V element on the preferred crystal structure of Au-catalyzed III-V nanowires. The …
F Matteini, VG Dubrovskii, D Rüffer… - …, 2015 - iopscience.iop.org
Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar …