Recent experimental and theoretical advances in the design and science of high-entropy alloy nanoparticles

W Al Zoubi, RAK Putri, MR Abukhadra, YG Ko - Nano Energy, 2023 - Elsevier
High-entropy alloy nanoparticles (HEA-NPs) hold unrestricted promise for various
applications in an unlimited chemical compositional space, as shown in recent years. These …

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

JP Seif, A Descoeudres, G Nogay… - IEEE journal of …, 2016 - ieeexplore.ieee.org
Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped
amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline …

Contact resistivity of the p-type amorphous silicon hole contact in silicon heterojunction solar cells

M Leilaeioun, W Weigand, M Boccard… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
In silicon heterojunction solar cells made with high-lifetime wafers, resistive losses in the
contacts dominate the total electrical power loss. Moreover, it is widely believed that the hole …

Evaluation of band offset at amorphous-Si/BaSi2 interfaces by hard x-ray photoelectron spectroscopy

R Takabe, H Takeuchi, W Du, K Ito, K Toko… - Journal of applied …, 2016 - pubs.aip.org
The 730 nm-thick undoped BaSi 2 films capped with 5 nm-thick amorphous Si (a-Si)
intended for solar cell applications were grown on Si (111) by molecular beam epitaxy. The …

Study on interfacial interaction between Si and ZnO

Z Liu, Y Tang, N Liao, P Yang - Ceramics International, 2019 - Elsevier
The interfacial reaction and bonding mechanism of Si based undoped and Al-doped ZnO
films were investigated experimentally and numerically. Si/ZnO heterojunctions were …

Measurement of valence-band offset at native oxide/BaSi2 interfaces by hard x-ray photoelectron spectroscopy

R Takabe, W Du, K Ito, H Takeuchi, K Toko… - Journal of applied …, 2016 - pubs.aip.org
Undoped n-type BaSi 2 films were grown on Si (111) by molecular beam epitaxy, and the
valence band (VB) offset at the interface between the BaSi 2 and its native oxide was …

Chemical trends of n-type doping of Al, Ga, In, and Ti donors for ZnO polycrystalline films deposited by direct-current magnetron sputtering

J Nomoto, H Makino, T Tsuchiya… - Journal of Applied …, 2020 - pubs.aip.org
We investigated the effects of various donors such as Al, Ga, In, and Ti atoms on the
properties of ZnO polycrystalline films. The contents of the dopants in the sintered targets …

Pronounced surface band bending of thin-film silicon revealed by modeling core levels probed with hard x-rays

D Wippler, RG Wilks, BE Pieters… - … Applied Materials & …, 2016 - ACS Publications
Enhancing the probing depth of photoemission studies by using hard X-rays allows the
investigation of buried interfaces of real-world device structures. However, it also requires …

Direct determination of the band offset in atomic layer deposited ZnO/hydrogenated amorphous silicon heterojunctions from X-ray photoelectron spectroscopy valence …

L Korte, R Rößler, C Pettenkofer - Journal of Applied Physics, 2014 - pubs.aip.org
The chemical composition and band alignment at the heterointerface between atomic layer
deposition-grown zinc oxide (ZnO) and hydrogenated amorphous silicon (a-Si: H) is …

[PDF][PDF] Research of photovoltaic properties of cogeneration cylindrical photovoltaic module for hybrid solar panels

S Halko, A Dyadenchuk, K Halko - E3S Web of Conferences, 2024 - e3s-conferences.org
Solar energy is the most efficient and cleanest source of energy, as well as a cheap and
eternal source of renewable energy. Improving the energy efficiency of solar panels will …