Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
This paper presents a method with an accurate control of threshold voltages (V th) of
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk… - Applied Physics …, 2005 - pubs.aip.org
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …
Capacitance–voltage characteristics of Al2O3/AlGaN/GaN structures and state density distribution at Al2O3/AlGaN interface
C Mizue, Y Hori, M Miczek… - Japanese Journal of …, 2011 - iopscience.iop.org
The potential modulation and interface states of Al 2 O 3/Al 0.25 Ga 0.75 N/GaN structures
prepared by atomic layer deposition (ALD) were characterized by capacitance–voltage (C …
prepared by atomic layer deposition (ALD) were characterized by capacitance–voltage (C …
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film
An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs)
is presented. This technique features an AlN thin film grown by plasma-enhanced atomic …
is presented. This technique features an AlN thin film grown by plasma-enhanced atomic …
Present status and future prospect of widegap semiconductor high-power devices
H Okumura - Japanese journal of applied physics, 2006 - iopscience.iop.org
High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …
which is one of the information network infrastructures in the 21st century, as well as power …
GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors
Y Hori, Z Yatabe, T Hashizume - Journal of Applied Physics, 2013 - pubs.aip.org
We have investigated the relationship between improved electrical properties of Al 2 O
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …
Investigations of HfO2∕ AlGaN∕ GaN metal-oxide-semiconductor high electron mobility transistors
C Liu, EF Chor, LS Tan - Applied physics letters, 2006 - pubs.aip.org
We report the studies of Al Ga N∕ Ga N metal-oxide-semiconductor high electron mobility
transistors (MOS-HEMTs) using reactive-sputtered Hf O 2 as the gate dielectric and the …
transistors (MOS-HEMTs) using reactive-sputtered Hf O 2 as the gate dielectric and the …