Basal-plane stacking faults are an important class of optically active structural defects in
wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

The quest to use nonpolar surfaces of nitride materials and devices started a few years ago
with the aim to avoid the strong internal electric fields in active regions of optoelec‐tronic …

Single photon emitters play a central role in many photonic quantum technologies. A
promising class of single photon emitters consists of atomic color centers in wide-bandgap …

Praise for the First Edition" The book goes beyond the usual textbook in that it provides more
specific examples of real-world defect physics... an easy reading, broad introductory …

GaN and its alloys with InN and AlN are materials systems that have enabled the revolution
in solid-state lighting and high-power/high-frequency electronics. GaN-based materials …

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …

We present a universal approach for determining the spontaneous polarization P sp of a
wurtzite semiconductor from the emission energies of excitons bound to the different types of …

We report on recent optical investigations of free and bound exciton properties in bulk GaN.
In order to obtain reliable data it is important to use low defect density samples of low …