ABSTRACT PCMs are Non-Volatile Memories (NVMs) that store data using phase-change
semiconductors, such as silicon-chalcogenide glass. In addition to increased integration …

We explore a novel data representation scheme for multilevel flash memory cells, in which a
set of n cells stores information in the permutation induced by the different charge levels of …

An efficient communications apparatus is described for a vector signaling code to transport
data and optionally a clock ing signal between integrated circuit devices. Methods of …

Codes for rank modulation have been recently proposed as a means of protecting flash
memory devices from errors. We study basic coding theoretic problems for such codes …

Phase Change Memory (PCM) is an emerging memory technology that has the capability to
address the growing demand for memory capacity and bridge the gap between the main …

Multiple reads of the same Flash memory cell with distinct word-line voltages provide
enhanced precision for LDPC decoding. In this paper, the word-line voltages are optimized …

An (n, d) permutation array (PA) is a subset of Sn with the property that the distance (under
some metric) between any two permutations in the array is at least d. They became popular …

Methods and apparatus are provided for recording input data in q-level cells of solid-state
memory (2), where q> 2. Input data words are encoded as respective codewords, each …

A method is disclosed for storing information on non-volatile memory which can rewrite
memory cells multiple times before a block needs to be erased. The information to be stored …

We study error-correcting codes for permutations under the infinity norm, motivated by a
novel storage scheme for flash memories called rank modulation. In this scheme, a set of n …