Energy storage properties under moderate electric fields in BiFeO3-based lead-free relaxor ferroelectric ceramics
M Wang, A Xie, J Fu, R Zuo - Chemical Engineering Journal, 2022 - Elsevier
Achieving high overall energy-storage properties under moderate electric fields is of great
significance for practical applications of energy-storage ceramic capacitors. In this work, an …
significance for practical applications of energy-storage ceramic capacitors. In this work, an …
Superior lead-free high-temperature piezoceramics of BiFeO 3–BaTiO 3–(Bi 0.5 Na 0.5) TiO 3 through cooperative regulation
A Xie, M Wang, J Fu, Z Yu, X Xie, R Zuo - Journal of Materials …, 2023 - pubs.rsc.org
How to overcome the contradiction between the piezoelectric coefficient (d33) and Curie
temperature (Tc) is a long-term challenge for practical applications of high-temperature …
temperature (Tc) is a long-term challenge for practical applications of high-temperature …
Lead-free bismuth ferrite-based (0.67-x) BiFeO3-0.33 BaTiO3-xSr (Al0. 5Ta0. 5) O3 ceramics with good energy storage characteristics
Y He, X Nie, S Xu, Y Sun, Z Peng, D Wu, L Wei… - Solid State …, 2023 - Elsevier
Abstract The solid solution BaTiO 3–BiFeO 3 ceramics have attracted great research interest
due to its saturated hysteresis loop with a high maximum polarization (P max), especially in …
due to its saturated hysteresis loop with a high maximum polarization (P max), especially in …
Enhancement of Nonlinear Dielectric Properties in BiFeO3–BaTiO3 Ceramics by Nb-Doping
BiFeO3–BaTiO3 (BF–BT) ceramics exhibit great potential for diverse applications in high
temperature piezoelectric transducers, temperature-stable dielectrics and pulsed-power …
temperature piezoelectric transducers, temperature-stable dielectrics and pulsed-power …
Feasibility of Powder‐Based High‐Throughput Synthesis for Ceramics Development: Case Study on the Influence of Calcination Temperature in BiFeO3‐BaTiO3
Recent advances in machine learning capabilities have increased interest in materials
research to improve the efficiency of materials discovery and optimization as well as to better …
research to improve the efficiency of materials discovery and optimization as well as to better …
Large remnant polarization and improved dielectric, magnetic properties of Te-modified 0.7 BiFeO3–0.3 BaTiO3 ceramics
Z Zhou, G Li, X Gong, Y Lu, J Tang, S Zhang - Ceramics International, 2023 - Elsevier
Abstract BiFeO 3–BaTiO 3 (BF–BT) ceramics, as a kind of binary ferroelectric material with
excellent properties, have a wide range of applications. A novel Te-doped 0.7 BiFe 1− x Te x …
excellent properties, have a wide range of applications. A novel Te-doped 0.7 BiFe 1− x Te x …
[HTML][HTML] Morphotropic Phase Boundary Region 0.7BiFeO3-0.3BaTiO3 Ceramics Exploration Under the Influence of the Incorporated Sn-Ions for Piezo/Ferro …
A Hussain, N Jabeen, IA Khan, MU Khan, MA Qaiser… - Crystals, 2025 - mdpi.com
In the field of piezoelectric applications, perovskite-based multifunctional composite
ceramics are widely explored. The morphotropic phase boundary (MPB) regions, where …
ceramics are widely explored. The morphotropic phase boundary (MPB) regions, where …
Rare Earth Substitution in Perovskite BiFeO3 Multiferroic: Comparative Study of Structural, Magnetic, and Optical Properties
In this study, BiFeO3 (BFO) and Er3+-, La3+-, and Nd3+-substituted BFO were synthesized
using Pechini's modified sol–gel auto-combustion route. Comprehensive investigations …
using Pechini's modified sol–gel auto-combustion route. Comprehensive investigations …
[PDF][PDF] 0.7 BiFeO_3-0.3 BaTiO_3 陶瓷中极化翻转产生的巨电卡效应增加及Mn~(4+) 离子掺杂对其介电, 铁电性能的影响
汤卉， 牛翔， 杨志朋， 彭小草， 赵小波， 姚英邦， 陶涛… - 物理学报, 2022 - wulixb.iphy.ac.cn
摘要BiFeO3 (BFO) 作为反铁磁性和铁电性共存的多铁性材料, 其饱和极化强度理论值在100
μC/cm2 以上, 居里温度为830℃, 其拥有的电卡效应非常大. 但是由于BFO …
μC/cm2 以上, 居里温度为830℃, 其拥有的电卡效应非常大. 但是由于BFO …
Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources
AF Qasrawi - 2023 - repository.aaup.edu
Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2
onto germanium thin crystals are reported. For these devices measurements of the current …
onto germanium thin crystals are reported. For these devices measurements of the current …