Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization
In this study, the gate electrode work function engineered Junctionless Accumulation Mode
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …
Design and performance optimization of junctionless bottom spacer FinFET for digital/analog/RF applications at sub-5nm technology node
Design and Performance Optimization of Junctionless Bottom Spacer FinFET for Digital/Analog/RF
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
A charge-based analytical model for gate all around junction-less field effect transistor including interface traps
This article proposes an analytic charge-based model that incorporates interface trapping.
The model's applicability to all operating zones includes various interface trap charges with …
The model's applicability to all operating zones includes various interface trap charges with …
Investigation on palladium gate electrode-based SOI junctionless FET for hydrogen gas sensing
This study provides a comprehensive investigation on palladium (Pd) gate electrode-based
silicon on insulator (SOI) junctionless field-effect transistor (JLFET) for hydrogen gas (H 2) …
silicon on insulator (SOI) junctionless field-effect transistor (JLFET) for hydrogen gas (H 2) …
Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity
K Aishwarya, B Lakshmi - Radiation Effects and Defects in Solids, 2023 - Taylor & Francis
All electronic devices when used in a radiation environment undergo significant changes in
their electrical properties. It is interesting to explore the effects of radiation, not only on …
their electrical properties. It is interesting to explore the effects of radiation, not only on …
Performance enhancement of recessed silicon channel double gate junctionless field-effect-transistor using TCAD tool
In this paper, we propose an n-type double gate junctionless field-effect-transistor using
recessed silicon channel. The recessed silicon channel reduces the channel thickness …
recessed silicon channel. The recessed silicon channel reduces the channel thickness …
Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor
K Aishwarya, B Lakshmi - Journal of Nanoparticle Research, 2023 - Springer
Junctionless tunnel field effect transistor (JLTFET) is one of the most promising devices due
to its exceptional performance as it combines the advantages of JLFET (junctionless field …
to its exceptional performance as it combines the advantages of JLFET (junctionless field …
Linearity and analog performance analysis of silicon junctionless bulk FinFET considering gate electrode workfunction variability and different fin aspect ratio
In case of conventional MOSFET structures, Short-Channel Effects (SCEs) are key issues for
device performance as dimensions of these devices are reaching nanometer scales …
device performance as dimensions of these devices are reaching nanometer scales …
GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function
The purpose of this study is to investigate the possibilities of the junction-less double-gate
(JLDG) MOSFET structure with gallium nitride (GaN) channel material to overcome the …
(JLDG) MOSFET structure with gallium nitride (GaN) channel material to overcome the …
Performance improvement of dopingless transistor for low power applications
In this paper, we propose the use of metal layer in the oxide region of charge plasma based
dopingless transistor for the suppression of band to band tunneling induced leakage current …
dopingless transistor for the suppression of band to band tunneling induced leakage current …