Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …

Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node
were analyzed at the device and circuit level considering the introduction of punchthrough …

In this paper, Self-Heating Effect (SHE) of Gate-All-Around (GAA) nanoplate field effect
transistor (FET) with variations of active area specifications including number of vertically …

In this article, the self-heating effect (SHE) of both dc and ac for a three-channel nanowire-
field effect transistor (FET) is investigated and analyzed. In the dc mode, as (definition: K) …

The junctionless multi-nanowire (JL-MNW) gate-all-around (GAA) field-effect transistor (FET)
has become an emerging device in the advanced node of modern semiconductor devices …

As semiconductor technology nodes continue to scale down to 3 nm, the self-heating effect
in Gate-All-Around Nanosheet Field-Effect Transistors (GAA-NSFETs) has become a …

Spatially resolved precise prediction of local temperature T (x, y, z) is essential to evaluate
Arrhenius-activated interconnect (eg, electromigration) and transistor reliability (eg, NBTI …

High device density and high power density intensify the self-heating effect in scaled FinFET
circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary …

In this paper, we have devised on shallow trench isolation (STI) design considering leakage
current () in Bulk/silicon on insulator (SOI) FinFET and vertical FET (VFET). The tendency is …

In this study, the self-heating effect (SHE) of sub-3-nm node forksheet (FS) field-effect
transistors (FETs) and nanosheet (NS) FETs were systematically analyzed using a fully …