III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

Epitaxy technology produces high-quality material building blocks that underpin various
fields of applications. However, fundamental limitations exist for conventional epitaxy, such …

Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …

Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately,
only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high …

The monolithic integration of wurtzite GaN on Si via metal–organic vapor phase epitaxy is
strongly hampered by lattice and thermal mismatch as well as meltback etching. This study …

This Perspective presents a review of current research activities on one-dimensional (1D)
semiconductor nanostructures grown on two-dimensional (2D) nanomaterials for flexible …

The properties of group III-Nitrides (III-N) such as a large direct bandgap, high melting point,
and high breakdown voltage make them very attractive for optoelectronic applications …

The many outstanding properties of graphene have impressed and intrigued scientists for
the last few decades. Its transparency to light of all wavelengths combined with a low sheet …